The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. A REPETITIVE AVALANCHE AND dv/dt RATED IRF460 HEXFET® TRANSISTORS THRU-HOLE (TO-204AA/AE)

 www.irf.com 1 500V, N-CHANNEL TO-3 Product Summary Part Number BVDSS RDS(on) ID IRF460 500V 0.27Ω 21A Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling ​